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M25P40-VMN6TP ST Microelectronics (意法半导体) Flash芯片兆位,低电压,串行闪存
M25P40-VMN6TP ST Microelectronics (意法半导体) Flash芯片兆位,低电压,串行闪存
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M25P40-VMN6TP ST Microelectronics (意法半导体) Flash芯片兆位,低电压,串行闪存

型号/规格:

M25P40-VMN6TP

品牌/商标:

ST

封装:

SOIC8

批号:

19+

产品信息

技术参数
电源电压(DC)
3.30 V, 3.60 V (max)
时钟频率
40.0 MHz, 40.0 MHz (max)
存取时间
40.0 μs
内存容量
4000000 B
封装参数
安装方式
Surface Mount
引脚数
8
封装
SOIC
外形尺寸
封装
SOIC
其他
产品生命周期
Not Listed by Manufacturer
包装方式
Cut Tape (CT)
符合标准
RoHS标准
Compliant
含铅标准
Lead Free
海关信息
ECCN代码
EAR99
产品概述

4兆位,低电压,串行闪存的40MHz SPI总线接口 4 Mbit, Low Voltage, Serial Flash Memory With 40MHz SPI Bus Interface

SUMMARY DESCRIPTION

The M25Pxx is a 512Kbit to 32Mbit (2M x 8) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus.

FEATURES SUMMARY

■ 512Kbit to 32Mbit of Flash Memory

■ Page Program (up to 256 Bytes) in 1.4ms(typical)

■ Sector Erase (256 Kbit or 512Kbit)

■ Bulk Erase (512Kbit to 32Mbit)

■ 2.7 to 3.6V Single Supply Voltage

■ SPI Bus Compatible Serial Interface

■ 40MHz to 50MHz Clock Rate (maximum)

■ Deep Power-down Mode 1μA (typical)

■ Electronic Signatures

– JEDEC Standard Two-Byte Signature(20xxh)

– RES Instruction, One-Byte, Signature, for backward compatibility

■ More than 100000 Erase/Program Cycles per Sector

■ More than 20 Year Data Retention